Details

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BUY 2SC5352 C5352V NPN 10A 400V TOSHIBA TO3P https://www.utsource.net/itm/p/9508852.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	-	-	400	V
Emitter-Base Voltage	V(BR)EBO	-	-	7	V
Collector Current	IC	-	-	10	A
Base Current	IB	-	-	5	A
Power Dissipation	PD	-	-	62.5	W
Total Device Dissipation	PTOT	-	-	87.5	W
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure the device is mounted on a suitable heat sink to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the leads and body.

2. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly as per the circuit diagram.
   • Ensure that the maximum ratings for voltage and current are not exceeded during operation.

3. Thermal Management:

   • Monitor the junction temperature to prevent overheating.
   • Use thermal compound between the transistor and heat sink for efficient heat transfer.

4. Storage:

   • Store in a dry environment within the temperature range specified.
   • Avoid exposure to corrosive substances.

5. Testing:

   • Perform initial testing at low power levels to ensure correct operation before full load testing.
   • Verify all connections and parameters meet the datasheet specifications.

For detailed specifications and more information, refer to the official TOSHIBA datasheet for the 2SC5352 C5352V NPN transistor.

(For reference only)