Details
BUY IKW40N65ES5 K40EES5 https://www.utsource.net/itm/p/9509672.html
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | - | 650 | - | V | |
| Collector Current | IC | - | 40 | - | A | Tj = 25°C, tp = 10 ms, IG = 10 A |
| Collector Current (Continuous) | IC(CONT) | - | 17 | - | A | Tj = 150°C |
| Gate-Emitter Voltage | VGE | -15 | 0 | 20 | V | |
| Total Power Dissipation | PTOT | - | - | 350 | W | TC = 25°C, Rth(j-c) = 0.8 K/W |
| Junction Temperature | Tj | - | 150 | - | °C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
| Gate Charge | QG | - | 100 | - | nC | VGE = ±15 V, IC = 40 A |
| Turn-On Delay Time | td(on) | - | 20 | - | ns | VGE = 15 V, IC = 40 A, RG = 1 Ω |
| Rise Time | tr | - | 50 | - | ns | VGE = 15 V, IC = 40 A, RG = 1 Ω |
| Turn-Off Delay Time | td(off) | - | 25 | - | ns | VGE = -15 V, IC = 40 A, RG = 1 Ω |
| Fall Time | tf | - | 50 | - | ns | VGE = -15 V, IC = 40 A, RG = 1 Ω |
Instructions for Use:
Mounting and Handling:
- Ensure that the device is mounted on a heatsink with adequate thermal management to maintain the junction temperature within safe limits.
- Handle the device with care to avoid mechanical damage and electrostatic discharge (ESD).
Biasing and Operation:
- Apply the gate-emitter voltage (VGE) within the specified range to ensure proper operation.
- The collector current (IC) should not exceed the maximum ratings, especially under continuous operation.
Thermal Management:
- The total power dissipation (PTOT) must be managed by ensuring sufficient heat sinking and cooling.
- Monitor the junction temperature (Tj) to prevent overheating and potential damage to the device.
Storage and Environment:
- Store the device in a dry, cool environment within the storage temperature range (TSTG).
- Avoid exposing the device to extreme temperatures or humid conditions.
Switching Characteristics:
- Pay attention to the turn-on and turn-off times (td(on), tr, td(off), tf) to optimize circuit performance and minimize switching losses.
Gate Drive:
- Use appropriate gate resistance (RG) to control the switching speed and reduce electromagnetic interference (EMI).
Safety Precautions:
- Always follow safety guidelines when handling high-voltage and high-current circuits.
- Ensure proper insulation and grounding to prevent electrical shock.
By adhering to these parameters and instructions, you can ensure reliable and efficient operation of the IKW40N65ES5 K40EES5 transistor.
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