GP50B60PD1 IRGP50B60PD1PBF TO-247

GP50B60PD1 IRGP50B60PD1PBF TO-247

Category: Transistors

Specifications
Details

BUY GP50B60PD1 IRGP50B60PD1PBF TO-247 https://www.utsource.net/itm/p/9515447.html

Parameter Value Unit
Device IRGP50B60PD1PBF
Package TO-247
Maximum Drain Current 50 A
Maximum Gate Source Voltage ±20 V
Maximum Drain Source Voltage 600 V
RDS(on) (Max) @ VGS = 10V 0.095 Ω
Continuous Primary Current 50 A
Pulse Primary Current 200 A
Junction Temperature Range -55 to 175 °C
Storage Temperature Range -55 to 175 °C

Instructions:

  1. Handling Precautions: Handle with care to avoid damage to the leads and body of the device. Avoid exposure to high temperatures and humidity.
  2. Mounting Orientation: Ensure proper orientation during mounting to prevent incorrect installation which can lead to device failure.
  3. Soldering Temperature: Do not exceed recommended soldering temperatures and times to avoid damaging the component.
  4. Electrostatic Discharge (ESD): Use appropriate ESD protection measures when handling to prevent damage from static electricity.
  5. Power Dissipation Management: Ensure adequate heat sinking or cooling mechanisms are in place to manage power dissipation, especially at higher operating currents.
  6. Testing: Before final assembly, conduct thorough testing under specified conditions to ensure reliability and performance.
  7. Storage: Store in a cool, dry place away from direct sunlight and corrosive materials.

For detailed specifications and application notes, refer to the manufacturer’s datasheet.

(For reference only)

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