2SK1058/2SJ162,

2SK1058/2SJ162,

Category: Transistors

Specifications
SKU
9515922
Details

BUY 2SK1058/2SJ162, https://www.utsource.net/itm/p/9515922.html

Parameter 2SK1058 (N-Channel) 2SJ162 (P-Channel)
Type MOSFET MOSFET
Channel N-Channel P-Channel
VDS (Max Drain-Source Voltage) -500 V 500 V
VGS (Max Gate-Source Voltage) 卤30 V 卤30 V
ID (Continuous Drain Current) 4 A 4 A
PTOT (Total Power Dissipation) 125 W 125 W
RDS(on) (On-State Resistance) 0.7 惟 (at VGS = 10 V) 0.7 惟 (at VGS = -10 V)
fT (Transition Frequency) 1 MHz 1 MHz
QG (Gate Charge) 100 nC 100 nC
QGD (Gate-Drain Charge) 25 nC 25 nC
TJ (Junction Temperature Range) -55掳C to 150掳C -55掳C to 150掳C
Package TO-220 TO-220

Instructions for Use:

  1. Handling Precautions:

    • ESD Protection: Both 2SK1058 and 2SJ162 are sensitive to electrostatic discharge (ESD). Use proper ESD protection measures such as wrist straps and grounded work surfaces.
    • Temperature Management: Ensure adequate heat sinking to manage the junction temperature within the specified range (-55掳C to 150掳C).
  2. Biasing:

    • N-Channel (2SK1058): Apply a positive gate-source voltage (VGS) to turn on the MOSFET. The typical operating range is from 10 V to 20 V.
    • P-Channel (2SJ162): Apply a negative gate-source voltage (VGS) to turn on the MOSFET. The typical operating range is from -10 V to -20 V.
  3. Circuit Design:

    • Gate Drive: Use a gate driver circuit to ensure fast switching and minimize switching losses. The gate resistor should be chosen to balance between switching speed and ringing.
    • Snubber Circuits: For high-frequency applications, consider using snubber circuits to reduce voltage spikes across the drain and source.
  4. Mounting:

    • Heat Sinking: Properly mount the MOSFETs to a heatsink to dissipate heat effectively. Ensure good thermal contact by using thermal paste or a thermal pad.
    • Mechanical Stress: Avoid mechanical stress on the leads and body of the MOSFETs during mounting and handling.
  5. Storage:

    • Dry Storage: Store the MOSFETs in a dry environment to prevent moisture damage. Use desiccant packets if storing for extended periods.
  6. Testing:

    • Initial Testing: Before integrating the MOSFETs into a circuit, perform initial testing to verify their functionality. Check the resistance between the drain and source with the gate grounded to ensure the MOSFET is not damaged.

By following these guidelines, you can ensure reliable operation and longevity of the 2SK1058 and 2SJ162 MOSFETs in your application.

(For reference only)

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