Details

---

BUY 2SK2917 TOSHIBA TO3PF MOS 18A 500V https://www.utsource.net/itm/p/9523963.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	Rds(on)	Vgs = 10V, Id = 5A	-	0.3	-	Ω
Gate Threshold Voltage	Vgs(th)	Id = 1mA	2.0	-	4.0	V
Input Capacitance	Ciss	Vds = 0V, f = 1MHz	-	600	-	pF
Output Capacitance	Coss	Vds = 500V, f = 1MHz	-	280	-	pF
Total Gate Charge	Qg	Vgs = 10V	-	70	-	nC
Maximum Drain Current	Id	Tc = 25°C	-	-	18	A
Maximum Drain-to-Source Voltage	Vds	-	-	-	500	V
Maximum Gate-to-Source Voltage	Vgs	-	-15	-	15	V
Power Dissipation (at Tc=25°C)	Ptot	-	-	-	90	W
Junction Temperature	Tj	-	-55	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage.
   • Use proper heat sinking for continuous operation at high current or power levels.

2. Mounting:

   • Ensure that the mounting surface is clean and flat.
   • Apply thermal compound between the device and heatsink for better thermal conductivity.

3. Gate Drive:

   • Ensure the gate drive circuit can provide sufficient voltage to fully turn on the MOSFET.
   • Keep gate-source voltage within specified limits to avoid damage.

4. Storage and Handling:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical damage.

5. Testing:

   • Test parameters under controlled conditions as per datasheet specifications.
   • Verify correct installation and connections before applying power.

Note: For detailed application notes and more specific guidelines, refer to the official TOSHIBA datasheet for the 2SK2917.

(For reference only)