Details

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BUY 85GT33SW https://www.utsource.net/itm/p/9527228.html

Parameter	Description	Value
Part Number	Product identifier	85GT33SW
Type	Component classification	MOSFET
Package	Physical package type	TO-252 (DPAK)
Drain Source Voltage	Maximum voltage between drain and source	60V
Continuous Drain Current	Maximum continuous current through the drain	11A
Power Dissipation	Maximum power dissipation	1.4W
Junction Temperature	Maximum operating junction temperature	-55°C to +175°C
Gate Charge	Total gate charge	19nC
Rds(on) at Vgs=10V	On-resistance at gate-source voltage of 10V	4.5mΩ
Input Capacitance	Capacitance between gate and source	1000pF
Body Diode VF	Forward voltage of the body diode	0.8V

Instructions for Use:

1. Handling Precautions: The 85GT33SW is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper mounting on a heatsink if operating near maximum power dissipation limits.
3. Soldering: Follow recommended soldering profiles to avoid damage. Peak temperatures should not exceed 260°C for more than 10 seconds.
4. Storage: Store in a dry, cool place. Observe polarity when installing to prevent damage.
5. Application: Suitable for switching applications in power supplies, motor control, and other high-frequency switching circuits.

(For reference only)