Details

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Parameter	Value
Part Number	FGH40N60UFD
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Voltage Rating (Vds)	600 V
Current Rating (Id)	40 A
Power Dissipation (Pd)	250 W (at 25掳C)
Rds(on) @ 10V	1.3 惟
Gate Charge (Qg)	120 nC
Thermal Resistance (RthJC)	0.5 掳C/W
Operating Temperature	-55掳C to +175掳C
Package Type	TO-247
Status	Active
RoHS Compliance	Yes

Instructions for Use:

1. Handling:

   • Handle with care to avoid damage to the device.
   • Use appropriate ESD protection when handling the component.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Follow the recommended PCB layout guidelines to minimize parasitic inductance and ensure optimal performance.

3. Biasing:

   • Apply the gate-to-source voltage (Vgs) within the specified range to avoid damaging the device.
   • Ensure the gate drive circuitry is capable of providing sufficient current to charge and discharge the gate capacitance quickly.

4. Operation:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Monitor the device temperature during operation to prevent thermal runaway.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the components in their original packaging until ready for use to protect against static discharge.

6. Testing:

   • Use a suitable test setup to verify the functionality of the MOSFET before integrating it into the final application.
   • Refer to the datasheet for detailed testing procedures and specifications.

(For reference only)