Details

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BUY W25Q16DVSSJG https://www.utsource.net/itm/p/9768063.html
IC FLASH MEMORY 16MB

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	Vcc	2.7	-	3.6	V	Operating supply voltage range
Standby Current	Icc	-	1	5	μA	Supply current in standby mode
Active Current (Read)	Icc	-	4	8	mA	Supply current during read operation
Programming Current	Icc	-	5	10	mA	Supply current during programming
Erase Current	Icc	-	10	20	mA	Supply current during erase operation
Data Output High Level	VOH	2.4	-	Vcc	V	Minimum output high level
Data Output Low Level	VOL	0	-	0.4	V	Maximum output low level
Input High Level	VIH	2.0	-	Vcc	V	Minimum input high level
Input Low Level	VIL	0	-	0.8	V	Maximum input low level
Access Time	tACC	0	0.07	0.1	μs	Access time from CE# low to valid output data
Page Program Time	tPP	-	2.5	4	ms	Typical page program time
Sector Erase Time	tSE	-	200	300	ms	Typical sector erase time
Bulk Erase Time	tBE	-	20	30	s	Typical bulk erase time
Write Enable Time	tWEL	0	0.1	1	μs	Write enable latch time
Write Disable Time	tWDS	0	0.1	1	μs	Write disable latch time
Chip Enable Setup Time	tCES	0	0	10	ns	Chip enable setup time before falling edge of WE# or RE#
Chip Enable Hold Time	tCEH	0	0	10	ns	Chip enable hold time after falling edge of WE# or RE#
Write Enable/Disable Setup	tWES	0	0	10	ns	Write enable/disable setup time before falling edge of WE#
Write Enable/Disable Hold	tWEH	0	0	10	ns	Write enable/disable hold time after falling edge of WE#
Read Cycle Time	tRC	0	0.1	0.15	μs	Read cycle time
Write Cycle Time	tWC	0	0.1	0.15	μs	Write cycle time

Instructions for Using W25Q16DVSSJG

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.

2. Standby Mode:

   • To enter standby mode, set the chip enable (CE#) pin to high. The current consumption will be minimal (1-5 μA).

3. Active Mode:

   • Set the CE# pin to low to activate the device. The current consumption will increase depending on the operation (read, program, or erase).

4. Read Operation:

   • Apply the read command sequence to the device.
   • Ensure the access time (tACC) is respected to avoid data corruption.
   • The data output high (VOH) and low (VOL) levels must be within the specified limits.

5. Write Operation:

   • Before writing, ensure the write enable (WREN) command is issued.
   • The write enable latch time (tWEL) must be observed.
   • After writing, issue the write disable (WRDI) command to prevent accidental writes.

6. Program Operation:

   • Use the page program command to write data to the device.
   • The typical page program time (tPP) is 2.5 ms, but it can take up to 4 ms.

7. Erase Operation:

   • Use the sector erase or bulk erase commands to erase memory.
   • The typical sector erase time (tSE) is 200 ms, and the bulk erase time (tBE) is 20 seconds.

8. Timing Requirements:

   • Adhere to the timing parameters such as setup and hold times for CE#, WE#, and RE# to ensure reliable operation.
   • Respect the read cycle time (tRC) and write cycle time (tWC) to avoid timing violations.

9. Data Protection:

   • Use the status register to monitor the busy status of the device during write and erase operations.
   • Implement error checking and handling mechanisms to ensure data integrity.

By following these instructions and adhering to the specified parameters, you can ensure reliable and efficient operation of the W25Q16DVSSJG flash memory.

(For reference only)