Details

---

BUY | VNH3SP30 VNH3SP30TR-E https://www.utsource.net/itm/p/9768256.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Supply Voltage	Vcc	4.5	-	28	V
Continuous Current	Ic	-	30	-	A
Peak Current	Ipk	-	60	-	A
Power Dissipation	PD	-	-	110	W
Thermal Resistance	Rth(j-c)	-	2.2	-	掳C/W
Operating Temperature	TA	-40	-	125	掳C
Storage Temperature	Tstg	-40	-	150	掳C
Gate Threshold Voltage	VGS(th)	1.5	2.5	4.0	V
On-State Resistance	RDS(on)	-	7.5	-	m惟	@ VGS=10V, ID=30A
Gate Charge	QG	-	120	-	nC
Total Gate Charge	QGT	-	140	-	nC
Switching Time	td(on)	-	50	-	ns
Switching Time	tr	-	30	-	ns
Switching Time	td(off)	-	50	-	ns
Switching Time	tf	-	30	-	ns

Instructions for Use:

1. Supply Voltage (V_cc):

   • Ensure the supply voltage is within the range of 4.5V to 28V to avoid damage to the device.

2. Continuous Current (I_c):

   • The device can handle a continuous current of up to 30A. Exceeding this value may cause overheating and damage.

3. Peak Current (I_pk):

   • The device can handle peak currents up to 60A, but only for short durations to prevent thermal stress.

4. Power Dissipation (P_D):

   • The maximum power dissipation is 110W. Proper heat sinking is required to manage thermal conditions.

5. Thermal Resistance (R_th(j-c)):

   • The thermal resistance from junction to case is 2.2掳C/W. Efficient heat dissipation is crucial to maintain operational temperature.

6. Operating Temperature (T_A):

   • The operating ambient temperature range is from -40掳C to 125掳C. Ensure the device operates within this range to avoid failure.

7. Storage Temperature (T_stg):

   • The storage temperature range is from -40掳C to 150掳C. Store the device in a controlled environment to prevent damage.

8. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage ranges from 1.5V to 4.0V. Apply sufficient gate voltage to ensure proper operation.

9. On-State Resistance (R_DS(on)):

   • The on-state resistance is 7.5m惟 at V_GS=10V and I_D=30A. This value affects the power loss during conduction.

10. Gate Charge (Q_G):

    • The total gate charge is 120nC. This parameter is important for calculating switching losses.

11. Total Gate Charge (Q_GT):

    • The total gate charge including all parasitic capacitances is 140nC.

12. Switching Times:

    • The typical switching times (t_d(on), t_r, t_d(off), t_f) are provided to help design the drive circuitry and minimize switching losses.

Additional Notes:

• Always refer to the datasheet for detailed specifications and application notes.
• Use appropriate heatsinks and cooling solutions to manage thermal conditions effectively.
• Ensure proper PCB layout to minimize inductance and improve performance.

(For reference only)