Details

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BUY 2N100 2A1000V FQD2N100TM TO-252 MOS https://www.utsource.net/itm/p/9770420.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDSS	-	-	1000	V	Maximum drain-to-source voltage
Gate-Source Voltage	VGS	-20	-	20	V	Maximum gate-to-source voltage
Continuous Drain Current	ID	-	-	2.0	A	Continuous drain current at TC = 25°C
Pulse Drain Current	Ipp	-	-	8.0	A	Pulse drain current
RDS(on) at VGS=10V	RDS(on)	-	0.7	-	Ω	On-resistance
Input Capacitance	Ciss	-	350	-	pF	Input capacitance
Total Power Dissipation	PD	-	-	1.1	W	Total power dissipation at TC = 25°C
Junction Temperature	TJ	-55	-	150	°C	Operating junction temperature range

Instructions:

1. Handling Precautions:

   • Use proper ESD (Electrostatic Discharge) protection when handling the MOSFET to avoid damage.

2. Mounting:

   • Ensure that the thermal resistance between the junction and ambient is minimized for optimal heat dissipation, especially when operating near maximum current or power ratings.

3. Biasing:

   • Apply gate voltages within the specified limits to prevent gate oxide breakdown. Typically, do not exceed ±20V for VGS.

4. Pulse Operation:

   • For pulse applications, ensure that peak currents do not exceed the maximum pulse drain current rating. Verify that the pulse width and duty cycle are within safe operating limits.

5. Storage:

   • Store in a dry environment and follow manufacturer guidelines for long-term storage conditions.

6. Package Type:

   • The TO-252 package should be mounted on a PCB with adequate copper area for heat sinking if operating near maximum power levels.

Note: Always refer to the specific datasheet provided by the manufacturer for the most accurate and detailed information.

(For reference only)