Details

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BUY TG110-S453NXRL https://www.utsource.net/itm/p/9775152.html

Parameter	Description	Value
Part Number	Full part number	TG110-S453NXRL
Type	Type of component	MOSFET
Polarity	Polarity of the device	N-Channel
VDS (Max)	Maximum Drain-to-Source Voltage	100 V
VGS (Max)	Maximum Gate-to-Source Voltage	卤20 V
ID (Max)	Maximum Drain Current at 25掳C	45 A
RDS(on)	On-State Resistance at VGS = 10 V, ID = 45 A	4.5 m惟
Power Dissipation	Maximum Power Dissipation	180 W
Operating Temperature	Junction Temperature Range	-55掳C to 150掳C
Package	Package Type	TO-247
Mounting	Mounting Type	Through-Hole
Lead Finish	Lead Finish	Matte Tin

Instructions for Use:

1. Handling Precautions:

   • Handle the MOSFET with care to avoid damage to the leads and body.
   • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Soldering:

   • Preheat the PCB to 120掳C to 150掳C before soldering.
   • Soldering temperature should not exceed 350掳C.
   • Soldering time should be limited to 3 seconds per joint.

3. Mounting:

   • Ensure that the MOSFET is securely mounted to the PCB.
   • Use a heat sink if necessary to manage thermal dissipation, especially under high current conditions.

4. Biasing:

   • Apply the gate voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Use appropriate gate drive circuits to ensure reliable operation.

5. Testing:

   • Test the MOSFET in a controlled environment to ensure it meets the specified parameters.
   • Monitor the junction temperature during operation to prevent overheating.

6. Storage:

   • Store the MOSFET in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against ESD.

7. Compliance:

   • Ensure that the MOSFET complies with all relevant safety and regulatory standards for your application.

(For reference only)