2SK962 K962

2SK962 K962

Category: Transistors

Specifications
SKU
9775253
Details

BUY 2SK962 K962 https://www.utsource.net/itm/p/9775253.html

Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - - 300 V -
Gate-Source Voltage VGS -10 - 10 V -
Continuous Drain Current ID - 2 5 A TC = 25°C
Pulse Drain Current IDpeak - 8 10 A tp = 10ms, f ≤ 100Hz
Total Power Dissipation PT - - 40 W TC = 25°C
Junction Temperature TJ - - 175 °C -
Storage Temperature TSTG -55 - 150 °C -
Thermal Resistance (Junction to Case) RθJC - 1.25 - °C/W -

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper handling to avoid static damage.
    • Use heat sinks to manage thermal resistance, especially when operating at high power levels.
  2. Biasing:

    • Apply gate-source voltage (VGS) within the specified range to control the drain current (ID).
    • For optimal performance, keep VGS within the typical operating range.
  3. Operating Conditions:

    • Do not exceed the maximum drain-source voltage (VDS) to prevent breakdown.
    • Ensure that the continuous drain current (ID) does not exceed the maximum rating, especially at higher temperatures.
    • For pulse operations, adhere to the specified pulse duration (tp) and frequency (f).
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it remains below the maximum limit.
    • Use appropriate cooling methods to maintain the device within safe operating temperatures.
  5. Storage:

    • Store the device in a dry, cool environment within the specified storage temperature range (TSTG).
  6. Testing:

    • Perform initial testing under controlled conditions to verify the device parameters and ensure it meets the required specifications.
(For reference only)

View more about 2SK962 K962 on main site