Details

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BUY STF13NM60ND https://www.utsource.net/itm/p/9779028.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-source on-state resistance	RDS(on)	-	130	-	mΩ	VGS = 10V, ID = 6.8A
Gate-source threshold voltage	VGS(th)	2.0	-	4.0	V	ID = 250μA
Input capacitance	Ciss	-	1500	-	pF	VDS = 15V, VGS = 0V to 15V
Output capacitance	Coff	-	100	-	pF	VDS = 15V, VGS = 0V
Reverse transfer capacitance	Crss	-	250	-	pF	VDS = 15V, VGS = 0V
Continuous drain current	ID	-	-	6.8	A	TC = 25°C
Pulse drain current	IGM	-	-	34	A	tP = 10ms, Rep rate 1%
Total gate charge	Qg	-	37	-	nC	VDS = 600V, VGS = ±10V, ID = 6.8A
Maximum drain-source voltage	VDSS	550	-	600	V	-
Maximum gate-source voltage	VGS(max)	-10	-	10	V	-
Junction temperature range	TJ	-55	-	150	°C	-

Instructions for Use:

1. Handling Precautions: The STF13NM60ND is sensitive to ESD (Electrostatic Discharge). Handle with care and use proper ESD protection measures.
2. Operating Temperature: Ensure that the device operates within its specified junction temperature range (-55°C to 150°C).
3. Voltage Ratings: Do not exceed the maximum ratings for drain-source voltage (VDSS) and gate-source voltage (VGS(max)).
4. Thermal Management: Given the continuous drain current capability, ensure adequate heat sinking or cooling mechanisms are in place to prevent overheating.
5. Gate Drive: Use appropriate gate drive voltages to minimize switching losses and ensure reliable operation. Recommended VGS levels should be between the minimum and maximum thresholds.
6. Storage Conditions: Store in a dry environment to prevent moisture damage. Follow recommended storage practices to maintain component integrity.
7. Mounting: Follow manufacturer guidelines for mounting and soldering to avoid mechanical stress and ensure optimal thermal performance.

For detailed application notes and further specifications, refer to the official datasheet provided by STMicroelectronics.

(For reference only)