Details

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BUY J449=2SJ449 https://www.utsource.net/itm/p/9780186.html

Parameter	Value	Unit
Type	P-channel MOSFET	-
Drain-Source Voltage (VDS)	500	V
Gate-Source Voltage (VGS)	±20	V
Continuous Drain Current (ID)	1.0	A
Pulse Drain Current (IDM)	4.0	A
Input Capacitance (Ciss)	300	pF
Output Capacitance (Coss)	60	pF
Total Gate Charge (Qg)	12	nC
RDS(on) at VGS = -4.5V	0.8	Ω
Power Dissipation (PD)	1.7	W
Operating Temperature (TJ)	-55 to +150	°C

Instructions for Use:

1. Handling: Handle the device with care to avoid damage to the leads and body. Use proper anti-static precautions.
2. Mounting: Ensure correct orientation during mounting. Follow manufacturer guidelines for soldering temperature and duration.
3. Biasing: Apply gate-source voltage within specified limits to prevent gate oxide damage.
4. Heat Management: Given the power dissipation rating, ensure adequate heat sinking if operating near maximum current or in high ambient temperatures.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.
6. Testing: Test the device under controlled conditions that do not exceed the maximum ratings provided in the table.

(For reference only)