LB11620T-TLM-H

LB11620T-TLM-H


Specifications
Details

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IC MTR DRV 4.5-5.5/8-17V 24TSSOP
Parameter Description
Part Number LB11620T-TLM-H
Type Power MOSFET
Package Type TO-220FM
Polarity N-channel
Drain Source Voltage VDS(max) = 60V
Continuous Drain Current ID = 78A (at 25°C), ID = 53A (at case temperature of 100°C)
Pulse Drain Current IDM = 190A (t=10ms, IGBT duty cycle ≤ 2%)
Gate Source Voltage VGS(th) = 4.0V (typical at ID = 1mA)
RDS(on) 3.5mΩ (max at VGS = 10V, ID = 78A)
Power Dissipation PD = 102W (at TC = 25°C)
Junction Temperature Tj = -55°C to +175°C
Storage Temperature Tstg = -55°C to +150°C
Operating Temperature Topr = -55°C to +125°C

Instructions for Use:

  1. Mounting: Ensure proper heat sinking to maintain junction temperatures within operational limits.
  2. Handling: Handle with care to avoid damage to the gate oxide layer.
  3. Storage: Store in a dry environment within specified storage temperature range.
  4. Installation: Follow manufacturer guidelines for PCB layout and mounting to ensure optimal performance.
  5. Testing: Perform initial testing under controlled conditions to verify parameters before full-scale integration.
  6. Safety: Always use appropriate safety measures when working with high currents and voltages.
(For reference only)

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