Details

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Parameter	Value
Part Number	IRF3205ZPBF
Description	N-Channel Enhancement Mode MOSFET
Package Type	TO-220
Vds (V)	55
Id (A)	110
Rds(on) (mΩ)	6.5 (at Vgs=10V)
Power Dissipation (W)	194 (Tc)
Operating Temperature (°C)	-55 to +175
Storage Temperature (°C)	-65 to +150
Mounting Type	Through Hole

Instructions for Use:

1. Handling Precautions: The IRF3205ZPBF is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
2. Heat Sinks: For optimal performance, especially under high current conditions, ensure the device is properly heat-sinked.
3. Biasing: Ensure the gate voltage is within specified limits to avoid damage or reduced performance.
4. Mounting: When mounting on a heatsink, use appropriate thermal paste to enhance heat transfer.
5. Storage: Store in original packaging in a dry, cool place away from direct sunlight and sources of heat.

Notes:

• Always refer to the datasheet provided by the manufacturer for detailed specifications and application notes.
• Verify compatibility with your specific application requirements.

(For reference only)