Details

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BUY FQA65N20 65N20 MOS 65A 200V https://www.utsource.net/itm/p/10131596.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDSS	-	-	200	V	Maximum drain-to-source voltage
Gate-Source Voltage	VGS	-15	-	15	V	Maximum gate-to-source voltage
Continuous Drain Current	ID	-	65	-	A	Continuous drain current at TC = 25°C
Pulse Drain Current	IDM	-	180	-	A	Pulse drain current (t < 10ms)
Gate Charge	Qg	-	45	-	nC	Total gate charge
Input Capacitance	Ciss	-	2300	-	pF	Input capacitance
Output Capacitance	Coss	-	590	-	pF	Output capacitance
Reverse Transfer Capacitance	Crss	-	360	-	pF	Reverse transfer capacitance
RDS(on) at VGS=10V	RDS(on)	-	0.045	-	Ω	On-state resistance
Power Dissipation	PD	-	-	275	W	Maximum power dissipation
Junction Temperature	TJ	-	-	175	°C	Maximum junction temperature

Instructions for Use:

1. Voltage Handling:

   • Ensure the drain-source voltage does not exceed 200V to prevent damage.
   • The gate-source voltage should be kept within ±15V.

2. Current Handling:

   • Operate within a continuous drain current of up to 65A at room temperature.
   • For pulse applications, ensure the peak current does not exceed 180A for pulses shorter than 10ms.

3. Thermal Management:

   • Monitor and maintain the junction temperature below 175°C to avoid thermal runaway.
   • Adequate heat sinking is required for high current or high power dissipation applications.

4. Capacitance Considerations:

   • Be aware of the input, output, and reverse transfer capacitances when designing circuits to minimize switching losses and ensure stability.

5. Gate Drive:

   • Provide sufficient gate drive to fully turn on the MOSFET, minimizing RDS(on) and reducing conduction losses.
   • Use gate resistors to control the switching speed and reduce electromagnetic interference (EMI).

6. Storage and Handling:

   • Store in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage.
   • Follow proper ESD precautions during assembly and testing.

(For reference only)