BYV26D

BYV26D

Category: Transistors

Specifications
SKU
11201511
Details

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Super quick restore diode
Parameter Symbol Min Typical Max Unit
Reverse Breakdown Voltage VBR - 600 - V
Maximum Reverse Current IR - 5 - 渭A
Forward Voltage (IF=1mA) VF - 1.1 - V
Reverse Recovery Time trr - 35 - ns
Operating Junction Temp. TJ -40 - 150 掳C
Storage Temperature TSTG -55 - 150 掳C

Instructions for Use:

  1. Handling:

    • Handle the BYV26D with care to avoid damage to the leads or body.
    • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure that the leads are not bent excessively close to the body of the diode.
    • Soldering should be done quickly to avoid overheating the junction. The maximum soldering temperature is 260掳C for 10 seconds.
  3. Operating Conditions:

    • Do not exceed the reverse breakdown voltage (VBR) to prevent permanent damage.
    • Keep the operating junction temperature (TJ) within the specified range to ensure reliable operation.
  4. Storage:

    • Store the diode in a dry, cool place to prevent moisture damage.
    • Follow the storage temperature range (TSTG) to avoid degradation of performance.
  5. Testing:

    • Use appropriate test equipment to measure the forward voltage (VF) and reverse current (IR).
    • Ensure that the test conditions do not exceed the maximum ratings.
  6. Applications:

    • The BYV26D is suitable for high-frequency switching applications, such as in power supplies and inverters.
    • It can also be used in protection circuits due to its fast reverse recovery time (trr).
(For reference only)

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