IRFB4332PBF

IRFB4332PBF

Category: Transistors

Specifications
SKU
11226119
Details

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Parameter Symbol Test Conditions Min Typ Max Unit
Continuous Drain Current ID Tc = 25掳C - 16 - A
Pulse Drain Current IDM Tc = 25掳C, t = 10 渭s - 80 - A
Gate-Source Voltage VGS -10 - 10 V
Drain-Source Breakdown Voltage BVdss ID = 250 渭A, Tc = 25掳C - 55 - V
Gate-Threshold Voltage VGS(th) ID = 250 渭A, Tc = 25掳C 1.0 1.5 2.0 V
On-State Resistance RDS(on) VGS = 10 V, ID = 16 A, Tc = 25掳C 0.007 - 0.009
Total Gate Charge Qg VGS = 10 V, Tc = 25掳C - 38 - nC
Input Capacitance Ciss VDS = 15 V, f = 1 MHz - 1600 - pF
Output Capacitance Coss VDS = 15 V, f = 1 MHz - 420 - pF
Reverse Transfer Capacitance Crss VDS = 15 V, f = 1 MHz - 1180 - pF
Junction to Ambient Thermal Resistance R胃JA Tc = 25掳C - 62 - 掳C/W

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain junction temperature within safe limits.
    • Handle with care to avoid static damage; use ESD protection.
  2. Biasing:

    • Apply gate-source voltage (VGS) within the specified range to avoid damage.
    • Ensure that the gate-source voltage is sufficient to fully turn on the MOSFET for minimum on-state resistance.
  3. Current Limitation:

    • Do not exceed the continuous drain current (ID) or pulse drain current (IDM) ratings.
    • Use appropriate current limiting techniques if necessary.
  4. Thermal Management:

    • Monitor the junction temperature (Tj) to ensure it does not exceed the maximum rating.
    • Use thermal vias and heatsinks to improve heat dissipation.
  5. Capacitance Considerations:

    • Account for input (Ciss), output (Coss), and reverse transfer (Crss) capacitances in high-frequency applications.
    • These capacitances can affect switching performance and should be considered in circuit design.
  6. Storage and Operating Temperature:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Operate within the specified temperature range to ensure reliable performance.
  7. Testing:

    • Use the test conditions provided in the parameter table for accurate measurements.
    • Ensure that all test equipment is calibrated and functioning properly.
  8. Safety:

    • Follow all safety guidelines and regulations when handling and operating the device.
    • Avoid exposing the device to excessive voltage or current to prevent damage.
(For reference only)

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