Details

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BUY IRFP3710PBF https://www.utsource.net/itm/p/11226120.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Drain-Source Voltage	VDS	-	-	550	V	-
Gate-Source Voltage	VGS	-20	-	20	V	-
Continuous Drain Current	ID	-	24	-	A	TC = 25掳C
Continuous Drain Current	ID	-	18	-	A	TC = 100掳C
Pulse Drain Current	IDM	-	60	-	A	tp = 10 渭s, IG = 10 A
Power Dissipation	PTOT	-	-	190	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • ESD Sensitivity: The IRFP3710PBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
   • Gate Protection: Avoid applying voltages outside the specified range to the gate. Use appropriate clamping diodes or resistors if necessary.

2. Thermal Management:

   • Heat Sinking: Ensure adequate heat sinking to keep the junction temperature within the specified limits, especially under high current or continuous operation.
   • Thermal Resistance: The thermal resistance from the junction to the case (R_胃JC) is typically 0.55掳C/W. Use this value for thermal calculations.

3. Electrical Characteristics:

   • Drain-Source On-Resistance (R_DS(on)): The on-resistance is typically 0.18 惟 at V_GS = 10 V and I_D = 24 A. Ensure that the gate voltage is sufficient to fully turn on the MOSFET.
   • Threshold Voltage (V_GS(th)): The threshold voltage is typically 4 V at I_D = 250 渭A. This is the minimum gate-source voltage required to start conducting current.

4. Mounting:

   • Surface Mount: If using surface mount technology, follow the recommended soldering profile to avoid damage to the device.
   • Through-Hole: For through-hole mounting, ensure that the leads are properly aligned and soldered without excessive heat.

5. Testing:

   • Initial Testing: After installation, perform initial testing to verify the correct operation of the MOSFET. Check for proper gate drive and drain-source voltage/current levels.
   • Periodic Testing: Conduct periodic testing to ensure the device is operating within its specifications and to detect any potential issues early.

6. Storage:

   • Dry Environment: Store the IRFP3710PBF in a dry environment to prevent moisture absorption, which can lead to damage during soldering.
   • Static-Free Area: Store the device in a static-free area to prevent ESD damage.

By following these guidelines, you can ensure reliable and efficient operation of the IRFP3710PBF in your application.

(For reference only)