WFW20N50

WFW20N50

Category: Transistors

Specifications
Details

BUY WFW20N50 https://www.utsource.net/itm/p/11226134.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage V_DS -50 50 V
Gate-Source Voltage V_GS -20 20 V
Continuous Drain Current I_D 20 A T_C = 25°C
Pulse Drain Current I_DM 60 A t_P = 10ms, I_G = 1A
Power Dissipation P_TOT 180 W T_C = 25°C
Junction Temperature T_J 175 °C
Storage Temperature T_STG -55 150 °C

Instructions for Use:

  1. Handling Precautions: The WFW20N50 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
  2. Mounting: Ensure adequate heat dissipation when mounting the device. Thermal management is crucial for maintaining performance and reliability.
  3. Operating Conditions: Operate within specified voltage and current limits to avoid damage or reduced lifespan.
  4. Pulse Operation: For pulse operation, ensure that the pulse width and frequency do not exceed the maximum ratings provided.
  5. Gate Drive: Apply gate voltages within the specified range to prevent gate oxide damage.
  6. Storage: Store in a dry environment within the temperature range specified to avoid damage from moisture or extreme temperatures.
(For reference only)

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