Details

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BUY SUP85N15 https://www.utsource.net/itm/p/11226165.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Drain-Source Voltage	VDS	-	-	150	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Drain Current	ID	-	-	85	A	@ TC = 25掳C
Pulse Drain Current	IDpeak	-	-	340	A	@ TC = 25掳C, tp = 10 渭s, IGT = 10 A
Power Dissipation	PTOT	-	-	225	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance (Junction to Case)	R胃JC	-	0.5	-	掳C/W

Instructions for Use:

1. Handling Precautions:

   • ESD Protection: The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
   • Temperature Management: Ensure that the operating temperature does not exceed the maximum junction temperature (T_J = 175掳C).

2. Mounting:

   • Heat Sinking: For high power applications, use an appropriate heat sink to manage the power dissipation and keep the junction temperature within safe limits.
   • Torque Specification: Follow the recommended torque specifications for the mounting screws to ensure a secure and reliable connection.

3. Electrical Connections:

   • Gate Drive: Ensure that the gate drive circuitry provides sufficient voltage and current to turn the MOSFET on and off quickly and reliably.
   • Source Connection: The source terminal should be connected to the lowest potential point in the circuit to minimize parasitic inductance and improve switching performance.

4. Operating Conditions:

   • Continuous Operation: The continuous drain current (I_D) should not exceed 85 A at a case temperature (T_C) of 25掳C.
   • Pulse Operation: For pulse operation, the peak drain current (I_Dpeak) can reach up to 340 A for a pulse duration of 10 渭s at a case temperature of 25掳C.

5. Storage:

   • Environmental Conditions: Store the device in a dry, cool environment with temperatures between -55掳C and 150掳C.

6. Testing:

   • Initial Testing: Before integrating the device into a circuit, perform initial testing to verify its electrical parameters and functionality.
   • Regular Inspection: Regularly inspect the device for signs of wear or damage, especially in high-reliability applications.

By following these guidelines, you can ensure the reliable and efficient operation of the SUP85N15 MOSFET.

(For reference only)