Details

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BUY 2SK4086 https://www.utsource.net/itm/p/11234300.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Drain-Source Voltage	Vds	-		500	V
Gate-Source Voltage	Vgs	-10		10	V
Continuous Drain Current	Id	-	15	20	A	Tc = 25掳C
Pulse Drain Current	Idp	-	30	40	A	t = 10 ms, Tc = 25掳C
Transconductance	Gfs	10	20	30	S	Vds = 25V, Vgs = 4V, Id = 10A
Input Capacitance	Ciss	-	1500	-	pF	f = 1 MHz
Output Capacitance	Coss	-	250	-	pF	f = 1 MHz
Reverse Transfer Capacitance	Crss	-	350	-	pF	f = 1 MHz
Junction Temperature	Tj	-55		175	掳C
Storage Temperature	Tstg	-55		150	掳C

Instructions for Use:

1. Handling Precautions:

   • The 2SK4086 is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
   • Avoid exceeding the maximum ratings to prevent damage.

2. Mounting:

   • Ensure good thermal management by using a heatsink if necessary, especially during high current operation.
   • Follow recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

3. Biasing:

   • Apply gate-source voltage (Vgs) within the specified range to control the drain current (Id).
   • Ensure that the gate is properly biased to avoid excessive power dissipation and potential damage.

4. Operating Conditions:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Monitor the junction temperature (Tj) to prevent overheating.

5. Testing:

   • Use appropriate test equipment and methods to measure parameters such as transconductance (Gfs), input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss).

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against ESD and physical damage.

By following these instructions, you can ensure optimal performance and longevity of the 2SK4086 MOSFET.

(For reference only)