Details

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BUY FJA13009 J13009 13009 TO-3P https://www.utsource.net/itm/p/11241309.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	700	V
Emitter-Base Voltage	VEB	-	-	7	V
Collector Current	IC	-	-	15	A
Power Dissipation	PT	-	-	125	W	@ TA = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	-	0.8	掳C/W
Transition Frequency	fT	-	2	-	MHz

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use a thermal compound between the transistor and the heatsink to improve thermal conductivity.

2. Biasing:

   • Apply appropriate biasing to ensure the transistor operates in the desired region (saturation, active, or cutoff).

3. Current Limiting:

   • Use current-limiting resistors if necessary to prevent exceeding the maximum collector current.

4. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CE) and emitter-base voltage (V_EB).

5. Power Dissipation:

   • Ensure that the power dissipation does not exceed the maximum rating to avoid overheating and potential damage.

6. Thermal Management:

   • Monitor the junction temperature and use adequate cooling methods to keep it below 150掳C.

7. Storage:

   • Store the transistor in a dry environment within the specified storage temperature range (-55掳C to 150掳C).

8. Handling:

   • Handle with care to avoid mechanical damage and static discharge. Use ESD protection when handling the device.

(For reference only)