Details

---

BUY FQA70N15 https://www.utsource.net/itm/p/11241332.html

Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDS	150	V
Gate-Source Voltage	VGS	卤20	V
Continuous Drain Current	ID	70	A
Pulse Drain Current (tp = 8/400 渭s)	ID(p)	140	A
Total Power Dissipation	PTOT	360	W
Junction Temperature	TJ	-55 to +175	掳C
Storage Temperature	TSTG	-55 to +150	掳C
Maximum Junction-to-Case Thermal Resistance	R胃JC	0.56	掳C/W

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid mechanical stress.
   • Mount the device on a heatsink to ensure proper heat dissipation, especially during high-power operations.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use short, low-inductance leads to minimize parasitic effects.

3. Gate Drive:

   • Apply a gate-source voltage (V_GS) within the specified range to turn the device on or off.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it remains within the safe operating range.
   • Use thermal paste between the device and the heatsink to improve thermal conductivity.

5. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range.
   • Avoid exposure to excessive humidity and static electricity.

6. Safety Precautions:

   • Always use appropriate safety equipment when handling high-voltage circuits.
   • Follow all relevant electrical and mechanical safety guidelines to prevent injury or damage.

7. Testing:

   • Perform initial testing at low power levels to verify correct operation before moving to higher power applications.
   • Regularly inspect the device for signs of wear or damage.

By following these instructions, you can ensure reliable and efficient operation of the FQA70N15 MOSFET.

(For reference only)