Details

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BUY FQP44N10 https://www.utsource.net/itm/p/11241338.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	100	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	4.4	-	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	17.6	-	A	TC = 25掳C, tp = 10 ms, Duty Cycle = 1%
Total Power Dissipation	PTOT	-	110	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Gate Charge	QG	-	23	-	nC	VGS = 10V, ID = 4.4A
Input Capacitance	Ciss	-	1100	-	pF	VDS = 25V, f = 1 MHz
Output Capacitance	Coss	-	120	-	pF	VDS = 25V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	30	-	pF	VDS = 25V, f = 1 MHz
Threshold Voltage	VGS(th)	2.0	2.5	3.0	V	ID = 250 渭A, TA = 25掳C
On-State Resistance	RDS(on)	-	0.55	-	惟	VGS = 10V, ID = 4.4A, TA = 25掳C

Instructions for Use:

1. Operating Conditions:

   • Ensure that the drain-source voltage (V_DS) does not exceed 100V.
   • The gate-source voltage (V_GS) should be within -20V to +20V.
   • The continuous drain current (I_D) should not exceed 4.4A at a case temperature (T_C) of 25掳C.

2. Thermal Management:

   • The junction temperature (T_J) should not exceed 150掳C.
   • Use appropriate heatsinking to manage power dissipation (P_TOT), especially when operating at high currents or in high ambient temperatures.

3. Gate Drive:

   • Apply a gate voltage (V_GS) of at least 10V to ensure the MOSFET is fully turned on and minimize on-state resistance (R_DS(on)).
   • Be aware of the threshold voltage (V_GS(th)) range to avoid partial turn-on, which can lead to increased power dissipation and potential damage.

4. Capacitance Considerations:

   • Account for input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) in circuit design, particularly in high-frequency applications.

5. Storage and Handling:

   • Store the device in a dry environment with a temperature range between -55掳C and 150掳C.
   • Handle with care to avoid static discharge, which can damage the gate oxide.

6. Pulse Operation:

   • For pulse operation, ensure that the pulse duration (t_p) and duty cycle do not exceed the specified limits to prevent overheating and damage to the device.

7. Testing and Verification:

   • Verify the device parameters under actual operating conditions to ensure reliability and performance.
   • Regularly check the device for signs of wear or damage, especially in high-stress applications.

(For reference only)