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IC EPROM 512K PARALLEL 28DIP
Parameter | Description | Value | Unit |
---|---|---|---|
Device Type | Non-Volatile Memory | 512 Kbit | - |
Technology | CMOS EPROM | - | - |
Organization | x8 | 64K x 8 | - |
Supply Voltage (Vcc) | Operating Range | 4.5 to 5.5 | V |
Standby Current (Icc) | Typical at Vcc = 5V, TA = 25°C | 1 | μA |
Active Current (Icc) | Typical at Vcc = 5V, TA = 25°C | 30 | mA |
Access Time (tAC) | Typical at Vcc = 5V, TA = 25°C | 15 | ns |
Data Retention | Minimum | 10 | years |
Operating Temperature (TA) | Range | -40 to +85 | °C |
Package Type | Plastic DIP | 28-pin | - |
Programming Voltage (Vpp) | Required for programming | 12.5 to 13.5 | V |
Erase Time | Typical for full chip erase | 10 | seconds |
Write Cycle Time | Typical | 5 | ms |
Endurance | Minimum number of write/erase cycles | 100,000 | cycles |
Instructions:
Power Supply:
- Connect Vcc to a stable 5V supply.
- Ground all GND pins.
Programming:
- Apply 12.5 to 13.5V to the Vpp pin during programming.
- Ensure the chip is properly selected using the chip select (CS) and output enable (OE) signals.
- Use a suitable programmer that supports the AT27C512R-15PC for writing data.
Erase:
- Expose the chip to UV light for approximately 10 seconds to erase the entire chip.
- Alternatively, use an electrical erase method if supported by the programmer.
Read Operation:
- Apply a low signal to the CS pin to select the chip.
- Apply a low signal to the OE pin to enable data output.
- Address the desired memory location using the address lines (A0-A15).
- Data will be available on the data lines (D0-D7).
Write Protection:
- The chip does not have built-in write protection. Ensure proper handling and programming procedures to avoid accidental writes.
Storage:
- Store the chip in a dry, cool environment to maintain data retention.
- Avoid exposure to excessive humidity and temperature variations.
Handling:
- Handle the chip with care to avoid static discharge.
- Use appropriate ESD protection measures when handling the chip.
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