Details

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BUY TC58NVG0S3HTA00 https://www.utsource.net/itm/p/11244209.html

Parameter	Description	Value
Product Name		TC58NVG0S3HTA00
Type	NAND Flash Memory
Density	Storage Capacity	128 Gb (16 GB)
Interface	I/O Interface	Toggle Mode 2.0 / ONFI 3.0
Package	Form Factor	WSON-16 (9x7mm)
Supply Voltage (Vcc)	Operating Range	1.7 V to 1.95 V
Operating Temperature	Industrial Grade	-40°C to +85°C
Data Retention	Data Retention Time	10 years at 25°C
Endurance	Program/Erase Cycles	3,000 cycles (typical)
Access Time	Page Read Time	50 μs (max)
Write Performance	Program Time per Page	500 μs (max)
Erase Performance	Block Erase Time	1.5 ms (max)
Data Bus Width	I/O Lines	8-bit
Command Set	Command Compatibility	ONFI 3.0, Toggle 2.0
Power Consumption	Active Read	150 mW (typical)
Power Consumption	Active Write	200 mW (typical)
Power Consumption	Standby	50 μW (typical)

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 1.7 V to 1.95 V.
   • Use a stable power source to avoid voltage fluctuations.

2. Temperature Considerations:

   • Operate the device within the industrial temperature range of -40°C to +85°C.
   • Avoid exposing the device to extreme temperatures for extended periods.

3. Signal Integrity:

   • Use proper signal integrity practices, including controlled impedance lines and appropriate termination resistors.
   • Ensure that all signals are properly routed and shielded to minimize noise and interference.

4. Programming and Erasing:

   • Follow the command set specifications for ONFI 3.0 or Toggle 2.0 interfaces.
   • Ensure that the program/erase operations do not exceed the maximum cycle count of 3,000 cycles.

5. Data Management:

   • Implement wear-leveling algorithms to distribute write operations evenly across the memory blocks.
   • Use error correction codes (ECC) to maintain data integrity.

6. Initialization:

   • Initialize the device by sending the appropriate reset and configuration commands as specified in the datasheet.
   • Verify the device status and configuration before performing read/write operations.

7. Power Management:

   • Use the standby mode to reduce power consumption when the device is not actively being used.
   • Ensure that the device is powered down correctly to prevent data corruption.

8. Handling:

   • Handle the device with care to avoid physical damage.
   • Use anti-static measures to prevent electrostatic discharge (ESD) damage.

For detailed technical specifications and additional information, refer to the official datasheet provided by the manufacturer.

(For reference only)