Details

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BUY FDC6331L https://www.utsource.net/itm/p/11244393.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VDD	2.0	-	5.5	V	Operating supply voltage range
Gate-Source Voltage	VGS	-18	-	18	V	Maximum gate-source voltage
Drain-Source Voltage	VDS	-40	-	40	V	Maximum drain-source voltage
Continuous Drain Current	ID	-	-	6.5	A	Maximum continuous drain current (at 25掳C)
Power Dissipation	PD	-	-	1.5	W	Maximum power dissipation (at 25掳C, 胃JA = 75掳C/W)
Junction Temperature	TJ	-	-	150	掳C	Maximum junction temperature
Storage Temperature	TSTG	-55	-	150	掳C	Operating storage temperature range
Input Capacitance	Ciss	-	120	-	pF	Input capacitance at VDS = 10V, f = 1 MHz
Output Capacitance	Coss	-	12	-	pF	Output capacitance at VDS = 10V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	3.5	-	pF	Reverse transfer capacitance at VDS = 10V, f = 1 MHz
Threshold Voltage	VGS(th)	0.8	1.2	1.6	V	Gate threshold voltage at ID = 250 渭A, VDS = 10V
On-State Resistance	RDS(on)	-	0.035	-	惟	On-state resistance at VGS = 4.5V, ID = 3.5A
Gate Charge	QG	-	12	-	nC	Total gate charge at VDS = 10V, ID = 3.5A
Switching Time	td(on)	-	12	-	ns	Turn-on delay time at VGS = 4.5V, ID = 3.5A
Switching Time	tr	-	12	-	ns	Rise time at VGS = 4.5V, ID = 3.5A
Switching Time	td(off)	-	12	-	ns	Turn-off delay time at VGS = 4.5V, ID = 3.5A
Switching Time	tf	-	12	-	ns	Fall time at VGS = 4.5V, ID = 3.5A

Instructions for Use:

1. Supply Voltage: Ensure that the supply voltage (V_DD) is within the specified range of 2.0V to 5.5V.
2. Gate-Source Voltage: Do not exceed the maximum gate-source voltage (V_GS) of 卤18V.
3. Drain-Source Voltage: The maximum drain-source voltage (V_DS) should not exceed 卤40V.
4. Continuous Drain Current: The continuous drain current (I_D) should not exceed 6.5A at 25掳C.
5. Power Dissipation: The power dissipation (P_D) should be kept below 1.5W to avoid overheating.
6. Junction Temperature: Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
7. Storage Temperature: Store the device in an environment where the temperature ranges from -55掳C to 150掳C.
8. Capacitances: Be aware of the input (C_iss), output (C_oss), and reverse transfer (C_rss) capacitances for circuit design considerations.
9. Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 0.8V and 1.6V.
10. On-State Resistance: The on-state resistance (R_DS(on)) is typically 0.035惟 at V_GS = 4.5V and I_D = 3.5A.
11. Gate Charge: The total gate charge (Q_G) is typically 12nC.
12. Switching Times: The turn-on delay time (t_d(on)), rise time (t_r), turn-off delay time (t_d(off)), and fall time (t_f) are all typically 12ns.

For detailed application notes and further information, refer to the datasheet provided by the manufacturer.

(For reference only)