Details

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BUY IRFP4110PBF IRFP4110 https://www.utsource.net/itm/p/11244401.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Drain-Source Voltage	VDS	-	500	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	24	-	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	80	-	A	tp = 10 渭s, IG = 10 A
Power Dissipation	PTOT	-	360	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	0.5	-	掳C/W

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within safe limits.
   • Use recommended mounting torque (typically 2.5 Nm) to avoid damage.

2. Biasing:

   • Apply gate-source voltage (V_GS) within the specified range (-20V to +20V).
   • Ensure gate drive circuitry is designed to provide sufficient current to switch the device quickly.

3. Current Handling:

   • Do not exceed the continuous drain current (I_D) of 24A at 25掳C case temperature.
   • For pulse applications, ensure the pulse duration (t_p) does not exceed 10 渭s and the peak current (I_D(p)) does not exceed 80A.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
   • Use thermal paste or thermal interface materials between the device and heat sink to improve thermal conductivity.

5. Storage:

   • Store the device in a dry environment within the temperature range of -65掳C to 150掳C.
   • Avoid exposure to high humidity and corrosive environments.

6. Handling:

   • Handle with care to avoid mechanical stress on the leads and body.
   • Use appropriate ESD protection to prevent damage from static electricity.

7. Testing:

   • Perform initial testing under controlled conditions to verify proper operation.
   • Refer to the datasheet for detailed test procedures and recommended test circuits.

(For reference only)