Details

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BUY IKW75N60H3 https://www.utsource.net/itm/p/11244471.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	600	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Collector Current	IC	-	75	-	A	TC = 25掳C
Continuous Collector Current	IC	-	55	-	A	TC = 100掳C
Power Dissipation	PTOT	-	-	280	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Total Gate Charge	QG	-	210	-	nC	VGE = 卤15V, IC = 75A
Input Capacitance	Ciss	-	3600	-	pF	f = 1 MHz
Output Capacitance	Coss	-	340	-	pF	f = 1 MHz
Reverse Transfer Capacitance	Crss	-	250	-	pF	f = 1 MHz

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.
   • Use appropriate heat sinks to manage the power dissipation and keep the junction temperature within safe limits.

2. Mounting:

   • Ensure proper mounting to a heatsink to dissipate heat effectively. The thermal resistance (R_th(j-c)) should be considered in the design.
   • Follow the recommended torque values for screw terminals to avoid mechanical stress.

3. Gate Drive:

   • Apply a gate-source voltage (V_GS) within the specified range to ensure reliable switching.
   • Use a gate resistor to control the rise and fall times of the gate signal, which can help reduce switching losses and electromagnetic interference (EMI).

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
   • Consider using forced air cooling or other cooling methods if natural convection is insufficient.

5. Storage:

   • Store the device in a dry environment within the storage temperature range (-55掳C to 150掳C) to prevent moisture-related issues.

6. Testing:

   • Before integrating the device into a circuit, perform initial tests to verify its functionality and parameters.
   • Use appropriate test equipment and procedures to avoid damaging the device during testing.

(For reference only)