BYV26EGP

BYV26EGP

Category: Transistors

Specifications
SKU
11244859
Details

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Super quick restore diode
Parameter Symbol Min Typ Max Unit Notes
Forward Voltage VF - 1.0 1.3 V @ IF = 20mA
Reverse Breakdown Voltage VR - 50 100 V @ IR = 1渭A
Forward Current (Continuous) IF - - 100 mA @ TA = 25掳C
Forward Current (Pulsed) IF(s) - - 500 mA @ tp = 10ms, fs = 10Hz
Reverse Current IR - 100 500 nA @ VR = 50V, TA = 25掳C
Power Dissipation PT - - 200 mW @ TA = 25掳C
Operating Temperature TOP -40 - 125 掳C
Storage Temperature TSTG -55 - 150 掳C
Thermal Resistance R胃J-A - 300 - K/W

Instructions for Use:

  1. Mounting: Ensure proper heat dissipation by mounting the BYV26EGP on a heatsink if operating at high current or power levels.
  2. Reverse Voltage: Do not exceed the maximum reverse voltage to avoid damage.
  3. Forward Current: Stay within the continuous and pulsed forward current ratings to prevent overheating.
  4. Temperature Range: Operate within the specified temperature range to ensure reliable performance.
  5. Storage: Store in a dry environment within the storage temperature range to avoid degradation.
  6. Handling: Handle with care to avoid mechanical damage, especially to the leads.
  7. Soldering: Use appropriate soldering techniques and temperatures to avoid thermal shock. Soldering temperature should not exceed 260掳C for more than 10 seconds.
  8. Electrostatic Discharge (ESD): Take necessary precautions to prevent ESD, which can damage the component.
(For reference only)

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