Details

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BUY PR39MF51NSZF https://www.utsource.net/itm/p/11246313.html

Parameter	Description	Value
Part Number	Component Identifier	PR39MF51NSZF
Type	Component Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Package	Enclosure Type	TO-220AB
Polarity	Conduction Type	N-Channel
VDSS	Drain-to-Source Voltage	55 V
VGS	Gate-to-Source Voltage	卤20 V
RDS(on)	On-State Resistance at VGS = 10 V	4.8 m惟 (max)
ID	Continuous Drain Current	90 A
IGSS	Gate-to-Source Leakage Current	卤100 nA (at VGS = 卤20 V)
QG	Total Gate Charge	145 nC
QGD	Gate-to-Drain Charge	36 nC
QGS	Gate-to-Source Charge	109 nC
Eoss	Output Capacitance Energy	1.7 渭J (at VDS = 55 V)
fT	Transition Frequency	2.4 MHz
TJ	Junction Temperature Range	-55掳C to +175掳C
TSTG	Storage Temperature Range	-65掳C to +150掳C
Rth(j-c)	Thermal Resistance, Junction to Case	0.55掳C/W

Instructions for Use:

1. Handling and Storage:

   • Store in a dry, cool place.
   • Handle with care to avoid damage to the leads and package.
   • Use proper ESD (Electrostatic Discharge) protection when handling.

2. Mounting:

   • Ensure good thermal contact between the device and heat sink.
   • Use a suitable thermal interface material (TIM) to enhance heat dissipation.
   • Follow the recommended torque values for screw mounting.

3. Biasing and Operation:

   • Apply gate voltage within the specified range to avoid damage.
   • Ensure the drain current does not exceed the maximum continuous drain current.
   • Keep the junction temperature within the specified operating range to prevent overheating.

4. Testing:

   • Use appropriate test equipment and methods to ensure accurate measurements.
   • Refer to the datasheet for detailed testing procedures and conditions.

5. Safety:

   • Always follow safety guidelines and regulations when working with high voltages and currents.
   • Use protective gear and equipment as necessary.

(For reference only)