Details

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BUY FMH23N50E 23N50E https://www.utsource.net/itm/p/11246680.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	500	-	V
Gate-Source Voltage	VGS	-15	0	20	V
Continuous Drain Current	ID	-	23	-	A	TC = 25掳C
Pulse Drain Current	IDpeak	-	69	-	A	tp = 10 渭s, TC = 25掳C
Power Dissipation	PTOT	-	230	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	0.45	-	掳C/W
Total Gate Charge	QG	-	130	-	nC	VGS = 15V, ID = 23A
Input Capacitance	Ciss	-	1800	-	pF	VDS = 25V, f = 1 MHz
Output Capacitance	Coss	-	230	-	pF	VDS = 25V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	100	-	pF	VDS = 25V, f = 1 MHz
Turn-On Delay Time	tdon	-	110	-	ns	VGS = 15V, ID = 23A
Rise Time	tr	-	60	-	ns	VGS = 15V, ID = 23A
Turn-Off Delay Time	tdo	-	110	-	ns	VGS = 15V, ID = 23A
Fall Time	tf	-	60	-	ns	VGS = 15V, ID = 23A

Instructions for Use:

1. Handling and Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Handle with care to avoid mechanical damage and static discharge.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified range.
   • Use thermal grease between the device and the heatsink for better thermal conductivity.

3. Biasing:

   • Apply the gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Ensure the gate is properly decoupled to prevent oscillations.

4. Operation:

   • Operate within the continuous drain current (I_D) and pulse drain current (I_Dpeak) limits.
   • Monitor the power dissipation (P_TOT) to avoid overheating.

5. Testing:

   • Use appropriate test equipment and methods to ensure accurate measurements.
   • Follow safety guidelines to prevent damage to the device and test equipment.

6. Soldering:

   • Use a controlled soldering process to avoid excessive temperatures that could damage the device.
   • Allow the device to cool down before handling or testing.

(For reference only)