AT24C512C-SSHD-T

AT24C512C-SSHD-T

Category: IC Chips

Specifications
SKU
11249046
Details

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Parameter Description Value Unit
Device Type Non-Volatile Serial EEPROM 2-Wire Compatible -
Memory Size Total Memory 512 Kbits (64 Kbytes) -
Organization Organization 64K x 8 -
Operating Voltage VCC Supply Voltage Range 1.7 to 5.5 V
Operating Temperature Operating Temperature Range -40 to +85 °C
Standby Current Standby Current (VCC = 5.5V) 1 μA
Active Current Active Current (VCC = 5.5V, fSCL = 400 kHz) 3 mA
Write Time Page Write Time (Max) 5 ms
Write Cycle Endurance (Typical) 1,000,000 Cycles
Data Retention Data Retention (Minimum) 100 Years
Communication Protocol Communication Protocol I2C (Two-Wire) -
Addressing Device Address 0x50 to 0x57 (7-bit) -
Package Package Type 8-Pin SOIC -
Pin Configuration Pin Configuration A0, A1, A2: Address Inputs; WP: Write Protect; SDA, SCL: Data and Clock Lines; VCC, GND: Power Supply -

Instructions for Use

  1. Power Supply:

    • Connect VCC to the positive supply voltage (1.7V to 5.5V).
    • Connect GND to the ground.
  2. Addressing:

    • Set the device address by connecting A0, A1, and A2 to either VCC or GND. The address is determined by the binary combination of these pins.
    • Example: A0 = GND, A1 = GND, A2 = GND sets the device address to 0x50.
  3. Write Protect:

    • Connect the WP pin to GND to enable writing to the memory.
    • Connect the WP pin to VCC to disable writing (write protect).
  4. I2C Communication:

    • Connect SDA (Serial Data Line) and SCL (Serial Clock Line) to the I2C bus.
    • Ensure pull-up resistors are connected to SDA and SCL lines to VCC.
  5. Reading Data:

    • Initiate a start condition on the I2C bus.
    • Send the device address with the read bit set (e.g., 0x50 for address 0x50).
    • Read the data from the SDA line.
    • Send a stop condition to terminate the read operation.
  6. Writing Data:

    • Initiate a start condition on the I2C bus.
    • Send the device address with the write bit set (e.g., 0x50 for address 0x50).
    • Send the memory address where the data will be written.
    • Send the data to be written.
    • Send a stop condition to terminate the write operation.
  7. Page Write:

    • Up to 32 bytes can be written in a single page write operation.
    • Ensure that the write time (5 ms) is respected before initiating another write operation to the same page.
  8. Endurance and Data Retention:

    • The device is rated for 1,000,000 write cycles.
    • Data retention is guaranteed for at least 100 years under specified operating conditions.
  9. Handling Precautions:

    • Avoid exposing the device to excessive voltage, current, or temperature beyond the specified limits.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)

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