Details

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BUY BCX17 https://www.utsource.net/itm/p/11249363.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	6	V
Collector Current	IC	100	mA
Base Current	IB	10	mA
Power Dissipation	PT	300	mW
Operating Temperature	TA	-65 to 150	°C
Storage Temperature	TSTG	-65 to 150	°C
Forward Current Transfer Ratio (hFE)	hFE	100 to 800	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat dissipation if operating near maximum power.
   • Use a heatsink if necessary, especially for continuous high-power applications.

2. Biasing:

   • Ensure the base current is sufficient to fully turn on the transistor.
   • Avoid exceeding the maximum base current (I_B).

3. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CEO).
   • Ensure the emitter-base voltage (V_EBO) is within limits.

4. Current Handling:

   • The collector current (I_C) should not exceed 100 mA.
   • Consider derating the current if operating at higher temperatures.

5. Temperature:

   • Operate within the specified temperature range (-65°C to 150°C).
   • Store the device within the storage temperature range (-65°C to 150°C).

6. Handling:

   • Handle with care to avoid mechanical damage.
   • Use appropriate ESD protection to prevent damage from static electricity.

7. Testing:

   • Test the device under controlled conditions to ensure it meets the required specifications.
   • Verify the forward current transfer ratio (h_FE) to ensure proper operation.

8. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Keep in original packaging until ready for use.

(For reference only)