Details

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BUY MMJT9410T1 https://www.utsource.net/itm/p/11249389.html

Parameter	Symbol	Conditions	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	Continuous	-	-	30	V
Emitter-Base Voltage	VEB	Continuous	-	-	5	V
Collector Current	IC	Continuous	-	-	150	mA
Base Current	IB	Continuous	-	-	20	mA
DC Current Gain	hFE	IC = 10mA, VCE = 5V	100	300	-	-
Transition Frequency	fT	-	-	300	-	MHz
Storage Temperature	TSTG	-	-55	-	150	°C
Operating Temperature	TA	-	-40	-	125	°C

Instructions for Use:

1. Handling:

   • Handle the MMJT9410T1 with care to avoid damage to the leads or the body.
   • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure that the leads are bent carefully to avoid excessive stress on the component.
   • Solder the leads quickly to avoid overheating. The maximum soldering temperature is 260°C for 10 seconds.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table to avoid damage to the transistor.
   • Ensure that the operating temperature is within the specified range to maintain reliable performance.

4. Storage:

   • Store the MMJT9410T1 in a dry, cool place to prevent moisture damage.
   • Keep the components away from direct sunlight and sources of heat.

5. Testing:

   • When testing the MMJT9410T1, use appropriate test equipment and follow safety guidelines to avoid damage to the device or injury.

6. Applications:

   • The MMJT9410T1 is suitable for general-purpose switching and amplification applications.
   • It can be used in circuits requiring high current gain and fast switching speeds.

(For reference only)