Details

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BUY FDS5682 https://www.utsource.net/itm/p/11250492.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-40	-	40	V	-
Gate-Source Voltage	VGS	-12	-	12	V	-
Continuous Drain Current	ID	-	3.6	4.0	A	VDS = 10V, TA = 25°C
Pulse Drain Current	IDM	-	4.5	5.0	A	VDS = 10V, tp = 10ms, TA = 25°C
Power Dissipation	PTOT	-	1.2	1.5	W	TC = 25°C
Junction Temperature	TJ	-	-	150	°C	-
Storage Temperature	TSTG	-55	-	150	°C	-
Gate Charge	QG	-	11	14	nC	VGS = 10V
Input Capacitance	Ciss	-	120	160	pF	VDS = 10V
Output Capacitance	Coss	-	30	40	pF	VDS = 10V
Reverse Transfer Capacitance	Crss	-	10	15	pF	VDS = 10V
Threshold Voltage	VGS(th)	1.0	1.5	2.0	V	ID = 250μA, TA = 25°C
On-State Resistance	RDS(on)	-	0.07	0.1	Ω	VGS = 10V, ID = 3.6A, TA = 25°C
Leakage Current	IDSS	-	-	1.0	μA	VDS = 10V, TA = 25°C

Instructions for Use:

1. Handling and Storage:

   • Store the FDS5682 in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid static discharge, which can damage the device.

2. Mounting:

   • Ensure proper heat sinking if operating at high currents or power dissipation.
   • Follow recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

3. Biasing:

   • Apply gate-source voltage (V_GS) within the specified range to avoid damaging the gate oxide.
   • Ensure that the gate is properly biased to achieve the desired on-state resistance (R_DS(on)).

4. Operation:

   • Do not exceed the maximum drain-source voltage (V_DS) to prevent breakdown.
   • Monitor the junction temperature (T_J) to ensure it does not exceed the maximum rating.
   • Use appropriate current limiting if operating at high drain currents to prevent overheating.

5. Testing:

   • Test the device under controlled conditions to verify its performance parameters.
   • Use a suitable test setup to measure key parameters such as R_DS(on), V_GS(th), and leakage current (I_DSS).

6. Safety:

   • Always follow safety guidelines when handling high voltages and currents.
   • Use protective equipment and grounding to prevent electrical shock.

(For reference only)