Details

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BUY FDH45N50F https://www.utsource.net/itm/p/11252094.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDS		-50		50	V
Gate-Source Voltage	VGS		-20		20	V
Continuous Drain Current (TC = 25掳C)	ID			11		A
Continuous Drain Current (TC = 100掳C)	ID			7.7		A
Pulse Drain Current (tp = 10 渭s, IGM = 250 mA)	ID(pulse)			36		A
Total Power Dissipation (TC = 25掳C)	PTOT			98		W
Total Power Dissipation (TC = 100掳C)	PTOT			56		W
Junction Temperature	TJ		-55		150	掳C
Storage Temperature	TSTG		-65		150	掳C
Thermal Resistance, Junction to Case	R胃JC			0.8		掳C/W
Thermal Resistance, Junction to Ambient	R胃JA			62		掳C/W

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (V_DS) does not exceed 50V.
   • The gate-source voltage (V_GS) should be within 卤20V.

2. Current Ratings:

   • For continuous operation, the drain current (I_D) should not exceed 11A at 25掳C case temperature or 7.7A at 100掳C case temperature.
   • For pulse conditions (10 渭s duration), the peak drain current can reach up to 36A.

3. Power Dissipation:

   • The total power dissipation (P_TOT) is 98W at 25掳C case temperature and 56W at 100掳C case temperature.

4. Temperature Limits:

   • The junction temperature (T_J) must be kept between -55掳C and 150掳C.
   • The storage temperature (T_STG) range is from -65掳C to 150掳C.

5. Thermal Management:

   • Use appropriate heat sinks to manage the thermal resistance from the junction to the case (R_胃JC = 0.8掳C/W) and from the junction to the ambient (R_胃JA = 62掳C/W).

6. Handling and Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress and electrostatic discharge (ESD) damage.

7. Mounting:

   • Ensure proper mounting to maintain thermal performance and electrical connections.
   • Follow the recommended PCB layout and soldering guidelines provided by the manufacturer.

(For reference only)