Details
BUY IRF6218PBF https://www.utsource.net/itm/p/11265842.html
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A | 5.0 | - | 7.0 | m惟 |
Gate Threshold Voltage | VGS(th) | ID = 250渭A | 2.0 | - | 4.0 | V |
Continuous Drain Current | ID | TC = 25掳C | - | 38 | - | A |
TC = 70掳C | - | 29 | - | A | ||
Pulse Drain Current | ID(pulse) | tp = 10ms, Rep Rate = 10Hz | - | 120 | - | A |
Total Power Dissipation | PD | TC = 25掳C | - | 160 | - | W |
TC = 70掳C | - | 100 | - | W | ||
Junction Temperature | TJ | - | - | - | 150 | 掳C |
Storage Temperature Range | Tstg | - | -55 | - | 150 | 掳C |
Instructions for IRF6218PBF:
Handling Precautions:
- Avoid exposing the device to temperatures exceeding its maximum junction temperature (150掳C).
- Use proper anti-static precautions to prevent damage.
Installation:
- Ensure that the mounting surface is flat and clean.
- Torque screws to the recommended specifications to avoid damaging the component.
Operation:
- Operate within specified current and voltage limits to ensure reliable performance.
- For pulse applications, ensure the duty cycle does not exceed the thermal capabilities of the device.
Storage:
- Store in a dry environment within the storage temperature range (-55掳C to 150掳C).
Mounting:
- Mount with adequate heatsinking if operating near the maximum power dissipation limits.
Testing:
- Test the device under controlled conditions before deployment in final applications.
View more about IRF6218PBF on main site