Details

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BUY IRFIZ44N https://www.utsource.net/itm/p/11270691.html

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Drain-Source Voltage	V(DS)	-	-	55	V
Gate-Source Voltage	V(GS)	-15	-	20	V
Continuous Drain Current	I(D)	-	33	-	A	Tc = 25°C
Pulse Drain Current	I(D)	-	94	-	A	Tp = 10ms, Duty = 1%
Power Dissipation	P(TOT)	-	-	175	W	Rth(j-a) = 62.5 K/W
Junction Temperature	Tj	-	-	175	°C
Storage Temperature	Tstg	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation.
   • Handle with care to avoid damage to the gate oxide.

2. Biasing Conditions:

   • Keep V(GS) within the specified limits to prevent gate damage.
   • Ensure V(DS) does not exceed the maximum rating to avoid breakdown.

3. Operating Conditions:

   • Monitor junction temperature; do not exceed 175°C to prevent thermal runaway.
   • For continuous operation, ensure current ratings are adhered to, especially at higher temperatures.

4. Pulse Operation:

   • During pulse operations, ensure duty cycle and pulse width comply with the specifications to avoid overheating.

5. Storage and Environment:

   • Store in a controlled environment to prevent exposure to extreme temperatures that could affect performance or longevity.

(For reference only)