Details

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BUY 2SJ334 https://www.utsource.net/itm/p/11271006.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	800	V	IC = 5 mA, Tj = 25掳C
Emitter-Collector Voltage	VECS	-	-	800	V	IC = 5 mA, Tj = 25掳C
Base-Emitter Voltage	VBE	-	-	7.0	V	IC = 500 mA, Tj = 25掳C
Collector Current	IC	-	-	10	A	VCE = 800 V, Tj = 25掳C
Base Current	IB	-	-	1.0	A	VCE = 800 V, Tj = 25掳C
Power Dissipation	PT	-	-	125	W	TC = 25掳C
Junction Temperature	Tj	-	-	150	掳C	-
Storage Temperature	Tstg	-55	-	150	掳C	-
Transition Frequency	fT	-	1.5	-	MHz	IC = 500 mA, VCE = 10 V, Tj = 25掳C

Instructions for Use:

1. Mounting:

   • Ensure that the device is mounted on a heatsink to dissipate heat effectively.
   • Use thermal compound between the device and the heatsink to improve thermal conductivity.

2. Biasing:

   • Apply a base current (I_B) sufficient to ensure the transistor is in the active region or saturated as required.
   • Avoid exceeding the maximum base current (I_B) to prevent damage.

3. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (V_CEO) or emitter-collector voltage (V_ECS).
   • Ensure the junction temperature (T_j) does not exceed 150掳C.
   • Store the device within the specified storage temperature range (-55掳C to 150掳C).

4. Handling:

   • Handle the device with care to avoid mechanical stress.
   • Use proper ESD protection to prevent damage from static electricity.

5. Testing:

   • When testing the device, use appropriate test equipment and follow safety guidelines to avoid injury or damage to the device.

6. Derating:

   • For continuous operation, derate the power dissipation based on the ambient temperature to ensure reliable performance.

7. Soldering:

   • Solder the device at temperatures no higher than 300掳C and complete the soldering process within 10 seconds to avoid thermal damage.

By following these instructions, you can ensure optimal performance and reliability of the 2SJ334 transistor.

(For reference only)