Details

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BUY 2SB709-R https://www.utsource.net/itm/p/11273413.html
2SB709-R PNP transistors(BJT) -45V -100mA/-0.1A 80MHz 210~340 -500mV/-0.5V SOT-23/SC-59 marking AR amplifier

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	800	V
Emitter-Collector Voltage	VECS	-	-	800	V
Base-Emitter Voltage	VBE	-1.5	-	1.5	V
Collector Current	IC	-	3	15	A
Base Current	IB	-	-	1.5	A
Power Dissipation	PT	-	-	125	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SB709-R with care to avoid mechanical damage.
   • Avoid exposure to high temperatures and humidity during storage and handling.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation and keep the junction temperature within the specified range.
   • Use appropriate mounting hardware to secure the transistor and ensure good thermal contact.

3. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly to avoid damage.
   • Use suitable wire gauges to handle the current ratings.

4. Operational Limits:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Operate the device within the specified temperature range to ensure reliable performance.

5. Testing:

   • Perform initial testing under controlled conditions to verify the correct operation of the device.
   • Monitor the temperature and performance parameters during operation to ensure they remain within safe limits.

6. Storage:

   • Store the 2SB709-R in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the devices in their original packaging until ready for use to protect against static discharge.

7. Disposal:

   • Dispose of the 2SB709-R according to local environmental regulations and guidelines for electronic components.

(For reference only)