Details

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BUY MMBT2222A-7-04-F https://www.utsource.net/itm/p/11274106.html
MMBT2222A-7 NPN Transistors(BJT) 40V 600mA/0.6a 300Mhz 30~300 0.3V~1V SOT-23/SC-59 marking K1 medium power amplifier switch

Parameter	Description	Value	Unit
Part Number	Component Identifier	MMBT2222A-7-04-F	-
Type	Component Type	NPN Transistor	-
Package	Enclosure	SOT-23	-
VCEO	Collector-Emitter Voltage (Max)	40	V
VCBO	Collector-Base Voltage (Max)	60	V
VEBO	Emitter-Base Voltage (Max)	6	V
IC	Collector Current (Continuous)	800	mA
IC (Pulse)	Collector Current (Pulse)	1500	mA
PTOT	Total Power Dissipation (Max)	315	mW
fT	Transition Frequency	300	MHz
hFE	DC Current Gain (Min/Typ)	100/300	-
VBE(sat)	Base-Emitter Saturation Voltage	0.7	V
VCE(sat)	Collector-Emitter Saturation Voltage	0.3	V
Storage Temperature	Operating Temperature Range	-65 to +150	掳C
Operating Temperature	Operating Temperature Range	-65 to +150	掳C

Instructions for Use:

1. Handling: Handle the MMBT2222A-7-04-F with care to avoid static damage. Use appropriate ESD protection.
2. Mounting: Ensure proper orientation and alignment during mounting. Follow the recommended soldering profile for SOT-23 packages.
3. Power Dissipation: Do not exceed the maximum power dissipation rating. Consider heat sinking if operating near the maximum power limits.
4. Voltage and Current Limits: Ensure that the applied voltages and currents do not exceed the maximum ratings to prevent damage to the transistor.
5. Storage: Store in a dry, cool environment to prevent moisture damage.
6. Testing: Use appropriate test equipment and methods to verify the functionality of the transistor. Refer to the datasheet for specific test conditions.
7. Schematic Design: When designing circuits, ensure that the transistor is used within its specified parameters to achieve optimal performance and reliability.

(For reference only)