Details

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BUY 1N4448HWT-7 https://www.utsource.net/itm/p/11274868.html
1N4448HWT-7 Switching Diodes 80V 250mA/0.25A SOD-523 marking T8 highspeed switch/high conductance

Parameter	Symbol	Min	Typical	Max	Unit
Peak Forward Current	IFSM	-	1.0	-	A
Continuous Forward Current	IF	-	300	-	mA
Reverse Voltage	VR	-	100	-	V
Reverse Current	IR	-	5	-	渭A
Forward Voltage (IF=10mA)	VF	0.9	1.1	1.3	V
Operating and Storage Temperature	T_A	-65	-	150	掳C
Junction Temperature	TJ	-65	-	150	掳C

Instructions for Use:

1. Handling: The 1N4448HWT-7 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling the device.
2. Mounting: Ensure that the device is mounted with adequate thermal management if it will be operating at high currents or in high ambient temperatures.
3. Soldering: Use a soldering iron with a temperature not exceeding 300掳C for a duration not exceeding 10 seconds. Avoid excessive heat which can damage the diode.
4. Polarity: Ensure correct polarity during installation. The cathode (marked band) should be connected to the more positive side of the circuit.
5. Derating: For continuous operation at temperatures above 25掳C, derate the forward current by 1.5 mA per degree Celsius above 25掳C.
6. Storage: Store the diodes in a dry, cool place away from direct sunlight and sources of heat.
7. Testing: When testing the diode, use a multimeter set to the diode test mode to check for proper forward and reverse characteristics.

(For reference only)