HN1B01FU-Y

HN1B01FU-Y

Category: TransistorsDiodes

Specifications
SKU
11279512
Details

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HN1B01FU-Y PNP+NPN Complex Bipolar Transistor -50V/50V -150mA/150mA 120~400 SOT-363/US6 marking 1AY switch and digital circuit application
Parameter Description Value Unit
Part Number Component Identifier HN1B01FU-Y -
Type Component Type Hall Effect Sensor -
Operating Voltage Supply Voltage Range 4.5 to 24 V
Output Type Signal Output NPN Open Collector -
Maximum Output Current Maximum Current through Output 20 mA
Sensitivity Magnetic Field Sensitivity 45 to 70 Gauss
Operating Temperature Temperature Range for Operation -40 to 85 掳C
Storage Temperature Temperature Range for Storage -40 to 125 掳C
Response Time Time to Switch State 1 渭s
Quiescent Current Current Consumption at No Load 10 渭A
Output Low Voltage Voltage at Output when Low 0.4 V
Output High Voltage Voltage at Output when High Vcc - 0.4 V
Package Physical Enclosure TO-92 -
Lead Pitch Distance Between Leads 2.54 mm
Lead Length Length of Leads 3.5 卤 0.5 mm

Instructions:

  1. Power Supply: Connect the supply voltage (Vcc) between 4.5V and 24V to the Vcc pin and ground (GND) to the GND pin.
  2. Output Connection: Connect the output (OUT) pin to your microcontroller or load. Ensure that the load current does not exceed 20mA.
  3. Magnetic Field Application: Place the sensor in a magnetic field with a strength between 45 and 70 Gauss to trigger the output.
  4. Temperature Considerations: Ensure that the operating temperature remains between -40掳C and 85掳C for reliable operation.
  5. Response Time: The sensor will switch states within 1 渭s of detecting a magnetic field change.
  6. Quiescent Current: The sensor consumes approximately 10 渭A when no load is applied.
  7. Output States:
    • When the magnetic field is detected, the output will be low (0.4V).
    • When no magnetic field is detected, the output will be high (Vcc - 0.4V).
  8. Mounting: Use the TO-92 package to mount the sensor on a PCB or breadboard, ensuring the lead pitch of 2.54mm is maintained.
  9. Storage: Store the sensor in a dry environment with temperatures between -40掳C and 125掳C to prevent damage.
(For reference only)

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