2SC2713-BL

2SC2713-BL

Category: TransistorsDiodes

Specifications
SKU
11279984
Details

BUY 2SC2713-BL https://www.utsource.net/itm/p/11279984.html
2SC2713-BL NPN Transistors(BJT) 120V 100mA/0.1A 100MHz 350~700 300mV/0.3V SOT-23/SC-59 marking DL radio general amplifier
Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCEO - - 40 V
Collector-Base Voltage VCBO - - 50 V
Emitter-Base Voltage VEBO - - 6 V
Collector Current IC - 150 - mA
Base Current IB - 15 - mA
DC Current Gain hFE 20 100 300 -
Transition Frequency fT - 150 - MHz
Power Dissipation Ptot - - 625 mW
Storage Temperature Range Tstg -55 - 150 掳C
Operating Temperature Range TA -55 - 150 掳C

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SC2713-BL with care to avoid damage to the leads and body.
    • Use appropriate anti-static precautions to prevent electrostatic discharge (ESD) damage.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat.
    • Apply thermal compound if necessary to improve heat dissipation.
    • Secure the transistor using a suitable mounting method, ensuring that the leads are not overstressed.
  3. Biasing:

    • Properly bias the base-emitter junction to ensure stable operation.
    • Use a current-limiting resistor in series with the base to prevent excessive base current.
  4. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Ensure that the operating temperature remains within the specified range to avoid thermal damage.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2SC2713-BL.
    • Check the collector-emitter voltage and current to ensure proper operation.
  6. Storage:

    • Store the 2SC2713-BL in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the components in their original packaging until ready for use to protect against static and physical damage.
(For reference only)

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