Details

---

BUY 2SB798 https://www.utsource.net/itm/p/11283730.html
2SB798 PNP transistors(BJT) -30V -1A 110MHz 90~180 -250mV/-0.25V SOT-89/SC-62 marking DM low collector saturation voltage

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Collector-Emitter Voltage	VCE	-	50	-	V	-
Emitter-Base Voltage	VEB	-	5	-	V	-
Collector Current	IC	-	150	-	mA	-
Base Current	IB	-	15	-	mA	-
Power Dissipation	PT	-	350	-	mW	TA = 25掳C
Storage Temperature Range	TSTG	-55	-	150	掳C	-
Operating Junction Temperature	TJ	-55	-	150	掳C	-
DC Current Gain (hFE)	hFE	100	400	800	-	IC = 10 mA, VCE = 5 V
Transition Frequency	fT	-	100	-	MHz	-

Instructions for Use:

1. Mounting: Ensure proper heat dissipation if operating near maximum power dissipation. Use a heatsink if necessary.
2. Biasing: Set the base current (I_B) to achieve the desired collector current (I_C) based on the DC current gain (h_FE).
3. Temperature Management: Operate within the specified temperature range to avoid damage. Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
4. Voltage Limits: Do not exceed the maximum collector-emitter voltage (V_CE) or emitter-base voltage (V_EB) to prevent breakdown.
5. Storage: Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C) to maintain reliability.
6. Handling: Handle with care to avoid mechanical damage. Use appropriate ESD protection when handling to prevent electrostatic discharge damage.

(For reference only)