Details

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BUY 2SC3645S https://www.utsource.net/itm/p/11284993.html
2SC3645S NPN Transistors(BJT) 120V 140mA/0.14A 150MHz 140~280 300mV/0.3V SOT-89/PCP marking CAS high voltage switch

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Collector-Emitter Voltage	VCEO	-	-	100	V
Collector-Base Voltage	VCBO	-	-	120	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	1.5	A
Base Current	IB	-	-	0.15	A
DC Current Gain	hFE	100	300	700	-
Transition Frequency	fT	-	250	-	MHz
Power Dissipation	Ptot	-	-	10	W
Junction Temperature	TJ	-20	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the transistor is mounted on a suitable heatsink if operating near its maximum power dissipation to prevent overheating.
2. Biasing: Proper biasing is crucial to ensure the transistor operates within its safe operating area (SOA). Use appropriate base resistors to limit base current.
3. Protection: Consider using reverse-biased diodes across the collector-emitter terminals to protect against voltage spikes in inductive load applications.
4. Storage: Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
5. Handling: Handle the transistor with care to avoid damage to the leads and internal structure. Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
6. Testing: When testing the transistor, use a multimeter or a dedicated transistor tester to check for proper operation and avoid applying excessive voltages or currents that could damage the device.

(For reference only)