Details

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BUY RTF015N03 https://www.utsource.net/itm/p/11286797.html
RTF015N03 MOSFET N-Channel 30V 1.5A SOT-323/SC-70/UMT3 marking PP ESD protection gate

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Forward Voltage	VF	IF = 1 A	-	0.3	0.4	V
Reverse Recovery Time	trr	IF = 1 A, VR = 30 V	-	35	-	ns
Continuous Forward Current	IF	TA = 25掳C	-	1.5	-	A
Pulse Forward Current	IFsm	tp = 8.3 ms, TA = 25掳C	-	3	-	A
Maximum Reverse Voltage	VR	-	-	30	-	V
Operating Junction Temperature	TJ(op)	-	-	150	-	掳C
Storage Temperature Range	Tstg	-	-65	-	150	掳C

Instructions for Use:

1. Forward Voltage (V_F):

   • Ensure that the forward voltage does not exceed 0.4V at a forward current of 1A to avoid excessive power dissipation.

2. Reverse Recovery Time (t_rr):

   • The reverse recovery time is critical for high-frequency applications. Ensure that the circuit design accounts for a maximum recovery time of 35ns.

3. Continuous Forward Current (I_F):

   • Do not exceed a continuous forward current of 1.5A at an ambient temperature of 25掳C to prevent overheating and potential damage.

4. Pulse Forward Current (I_Fsm):

   • For pulse applications, the device can handle up to 3A with a pulse width of 8.3ms at an ambient temperature of 25掳C. Ensure that the duty cycle and frequency are within safe limits.

5. Maximum Reverse Voltage (V_R):

   • The maximum reverse voltage should not exceed 30V to avoid breakdown and potential failure of the device.

6. Operating Junction Temperature (T_J(op)):

   • The device can operate safely with a junction temperature up to 150掳C. Ensure proper heat dissipation and thermal management to maintain this limit.

7. Storage Temperature Range (T_stg):

   • Store the device in an environment with a temperature range of -65掳C to 150掳C to ensure long-term reliability.

Additional Notes:

• Always refer to the datasheet for the most accurate and detailed information.
• Proper PCB layout and thermal management are crucial for optimal performance and longevity of the device.

(For reference only)